| 摘要 |
PURPOSE:To obtain an interface having excellent sharpness by increasing or decreasing the flow rate of a diluent gas free of a raw gas when the raw has is changed in the formation of a multilayered thin film of a semiconductor by a vapor phase growth method. CONSTITUTION:A raw gas such as AsH3, trimethylgallium, trimethylaluminum, diethyllead, and hydrogen selenide and a carrier gas (e.g., hydrogen) are prepared. The raw gases are introduced in the desired order into a crystal growth chamber 18 by switching valves 7, 8, 9, 10, etc., and a multilayered thin film of a semiconductor is formed on a substrate 19 arranged in the crystal growth chamber 18. At this time, the flow rate of a carrier gas is increased or decreased along with the switching of the raw gas by the operating of valves 31 and 32 to keep the total flow rate of the gases flowing into the crystal growth chamber 18 constant. Consequently, interfacial sharpness of less than several Angstrom can be provided to the boundary between each layer.
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