| 摘要 |
PURPOSE:To inhibit the generation of hillocks effectively by making at least one addition element having an atomic-radius difference with Al of 0.19Angstrom or more to be contained in a wiring material. CONSTITUTION:Al as an evaporation substance and 1.5at% Ni as an addition element are used, and applied to a semiconductor device (an silicon substrate) 11 through a two-element simultaneous mounting method, and a metallic film in which 1.5at% Ni is added to Al is formed onto the semiconductor substrate 1. When multilayer resist structure is used generally in a photoetching process for a high-density IC manufacturing process, the thickness of a first layer resist extends over approximately 0.5mum, and the permissible height of a hillock must be brought to 0.3mum or less in order to sufficiently cover the hillock with a resist layer. That is, a metallic wiring containing at least one addition element having an atomic-radius difference with Al of 0.19Angstrom or more is made to be contained in a wiring material mainly comprising Al, thus sufficiently inhibiting the material transfer of Al, then suppressing the generation of the hillock. Accordingly, the remarkable improvement of the wiring corrosion of the metallic wiring and inter-layer withstanding voltage, etc. can be expected. |
