| 摘要 |
PURPOSE:To contrive the improvement of process yield by eliminating the unevenness of heat resistance by eutectically mounting the elements on an eutectic mixture forming material layer for the coated semiconductor thin layer which is arranged in the enclosure in which the elements are mounted. CONSTITUTION:After a vapor deposition layer 1 is formed by depositing a Pt layer or a Ti layer as a barrier metal on a gold thickly plated layer 106, a silicon thin layer 2 is formed and the substrate is fixed to a supporting table 3 by use of a soluble resin layer 100 and then it is cut. A soluble resin layer 100 is removed by a solvent and the elements are separated respectively from the supporting table 3. The element 4 is composed of a gold thickly plated layer 106, a vapor deposition layer 1, and further a silicon thin layer 2 which compose a PHS structure on the back side of the substrate 101 having an active region 102 including base and emitter regions are formed in order. The elements are mounted by the eutectic mount 28 of Au and Si of the silicon thin film layer 2 and the gold layer 108a which is metallized on the mounting part of an enclosure 108. Thus the manufacture assembly can be made with high yield and the enhancement of output can contrived. |
