| 摘要 |
PURPOSE:To obtain a compound semiconductor element of superhigh reliability limiting the effect of mutual diffusion layers of titanium and a compound semiconductor due to heat treatment in minimum by forming titanium, platinum and gold by turns after the heat treatment of the surface of a semiconductor on which titanium is formed. CONSTITUTION:An N-InP buffer layer 11, an InGaAsP active layer 12 as a P-InP layer 13 are epitaxially grown by turns on an InP substrate 6 and an active region 10 is made to remain by a process of photo resist etching. Grooves are formed on both sides of the active region 10 and then an N-InP layer 14, a P-InP layer 15 and an InGaAsP layer 1 are grown. Then, titanium 3, platinum 4 and gold 5 are evaporated by turns with a sputtering equipment on a heat- treated titanium 2. Then, the side of the InP substrate 6 is polished and an alloy 7 of gold, germanium and nickel is heat-treated after evaporation by an evaporation equipment and then chromium 8 and gold 9 are evaporated. This reduces the deterioration rate of a semiconductor laser several times compared with conventional ones. |
