| 摘要 |
PURPOSE:To improve high-frequency characteristics by inserting a metallic film 4, the formation free energy of an oxide of which is smaller than or approximately the same as that of an silicon oxide, between a tungsten film or a molybdenum film and a natural oxide film 3 consisting of silicon. CONSTITUTION:An silicon dioxide film 11 is formed on the surface of a P type silicon single crystal substrate 10, a film 12 is shaped, and a polycrystalline silicon film 13 is deposited and the polycrystalline silicon 13 at a desired position is etched. An N type impurity region 15 is formed, a titanium film 16 and a tungsten film 17 are shaped, and natural oxide films 18 are reduced and titanium silicide films 19 and tungsten silicide films 20 are formed in succession in direct contacting sections among the natural oxide films 18 and silicon and the titanium film 16. The tungsten film 17 and the titanium film 16 in a section not reacted are removed, an aluminum film is deposited, and the aluminum film except a desired position is removed and a source wiring and a gate wiring are shaped. Accordingly, tungsten silicide has small resistivity, and the resistance of an silicon impurity diffusion layer is increased, thus obtaining a semiconductor device having extremely excellent high-frequency characteristics and high reliability. |
