| 摘要 |
<p>PURPOSE:To constitute an insulating layer extremely simply by forming insulating films patterned so as to intrude to bottoms among the side wall sections of each insularly projected and shaped N type emitter layer and bonding and applying the insulating films onto gate electrodes in said bottoms. CONSTITUTION:Layers 1-4 are shaped to an silicon semiconductor substrate, and the P type base layer 2 is etched selectively and dug in by an silicon etching liquid, thus insularly projecting N type emitter layers 4. An anode electrode 5, cathode electrodes 6, gate electrodes 7 and a positioning mark 13 are each formed, and adhesives 12 are applied thinly to an insulating film 11. Sections 14 corresponding to each insularly projected N type emitter layer 4 and a positioning mark 15 corresponding to the positioning mark 13 are bored and patterned, and the insulating film 11is positioned. Accordingly, the insulating film, an insulating material therein is patterned previously, is used, and adhesives are bonded onto the gate electrodes and an insulating film is shaped, thus completely removing defects due to pin holes and overetching and the like.</p> |
