| 摘要 |
PURPOSE:To obtain the concentric light source by enabling large-output oscillation on stable basic lateral mode, by providing a double-hetero structure sandwiched by N type and P type clad layers, a buried structure filled with semiconductor layers, and dielectric multilayer films increased in reflectance. CONSTITUTION:A multilayer film 10 is the alternate laminations of SiO2 and TiO2 by three layers: the first layer is SiO2, and the last sixth layer is TiO2. Since the refractive indices of SiO2 and TiO2 are 1.5 and 2.6, respectively, this multilayer film is set so that the light phase varies in each layer by 5/2pi when a light of 0.79mum wavelength comes incident vertically. On the other hand, a multilayer film 11 is the alternate laminations of amorphous Si and TiO2 by four layers: the first layer is Si, and the last eighth layer is TiO2. Since the refractive index of amorphous Si is 3.5, this multilayer film is set so that the light phase varies in each layer by pi/2 when a light of 0.77mum wavelength comes incident. |
