| 摘要 |
PURPOSE:To adhere a passivation film with good coverage, and to prevent the generation of cracks by a method wherein the passivation film is formed after aluminum wiring are formed and its recesses and steps are filled with an Si oxide film series film. CONSTITUTION:Similarly to the conventional case, an element-forming region, a gate poly Si electrode, etc. are formed on a substrate 11, and contact holes are bored. Aluminum wirings 14, 15 are formed, and next a coating solution for forming an Si oxide film series film is applied. Then, the Si oxide film 16 is formed by calcination in an N2 atmosphere. Since said coating solution has a low viscosity, the ends of the aluminum wirings 14 and 15 at the contact aperture part are filled with this coating solution. Here, calcination causes it to change into the oxide film series film 16, and at this step the wafer surface becomes gentle because the steps and recesses are filled with this film 16. Thereafter, a passivation film 17 is grown. |
