| 摘要 |
PURPOSE:To prevent junction breakdown caused by heating during assembly by a method wherein Au of the base metal is restricted to a range of the bottom of a bump electrode, and electrical connection is carried out without interposing an Si oxide film with an Au-less multilayer metal which covers the outside of the Si oxide film. CONSTITUTION:An N type Si substrate layer 1, an N<-> type epitaxial layer 2, a P type region 3, and an Si oxide film 6 are in the same structure as conventional. However, an Si oxide film is grown on the surface of the P type region 3 and selectively etched, and the oxide film other than its portion 6a corresponding to the center of the P type region 3 is removed. Next, a multilayer electrode 5a of Ti-Pt is adhered by vacuum evaporation to the whole surface of the region 3 including the oxide film 6a and part of the peripheral oxide film 6. Thereafter, as the base metal to form the bump electrode, an Au electrode 5b is selectively formed on the multilayer electrode 5a only in the range of the oxide film 6a at the center of the P type region. Finally, an Ag bump electrode 7 is selectively formed on the Au electrode 5b by a method such as electroplating. |
