| 摘要 |
<p>PURPOSE:To prevent mechanical strains affecting the Schottky junction without increasing the floating capacitance such as MOS capacitance, by a method wherein a bump electrode is formed on an oxide film located around a window, excluding the window part. CONSTITUTION:An Si oxide film 2 is formed on an Si substrate 1, and a window of required size is bored in the oxide film 2. Squeezed out to the window part and its periphery, a Schottky barrier forming metal 3 is adhered by evaporation or sputtering. Then, an adhesion metallic layer 4 of Ti-Pt or the like is formed thereon to improve adhesion between the upper bump electrode and the Schottky barrier forming metal. Thereafter, using a method such as photo resist, the oxide film 2 located around the window by excluding the window part with a Schottky junction is selectively plated with Ag or another element, thus forming a ring-shaped bump electrode 5 so as to surround the window part of Schottky junction.</p> |
