| 摘要 |
PURPOSE:To enhance the heat resistance, chemical resistance, oxidation resistance, and high frequency characteristic by a method wherein the front and back of a high melting point metallic film or the whole surface of the high melting point metallic layer are covered with a high melting point silicide layer. CONSTITUTION:A resist film 31 of required pattern in accordance with the gate region of a semiconductor substrate 20 is formed on a high melting point silicide layer 22 of the uppermost layer. Next, etching is carried out by using the resist film 31 as the mask, thus forming a state that the top and bottom of a gate electrode 23 are covered with the high melting point silicide 22, and the resist film 31 is removed. Another high melting point silicide film 22 is formed on the gate insulation film 21 by sputtering so as to cover the exposed surface of the electrode 23 and the silicide 22 on its top. Thereafter, the silicide film 22 is etched by a reactive ion etching having anisotropy; accordingly, a gate structure 25 of the MOSFET covered with the silicide film 22 at the regions of the top and side of the gate electrode 23 is obtained.
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