| 摘要 |
<p>PURPOSE:To enhance a yield of preparation of a chromium mask by introducing a gas mixture of O2 and CO2 into the quartz tube of a barrel asher and ashing a resist with O2 and CO2 plasma. CONSTITUTION:The quartz tube 11 of the barrel asher is provided with an anode 12 and a cathode 13 connected to an RF power source. A bucket 17 contg. a sample 18 is arranged in the tube 11, and the gas mixture of O2 and CO2 is introduced through a gas introducing tube 15. The Cr film 22 is formed on a glass substrate 21 and a resist pattern 23 is formed to obtain a Cr mask. The resist film 500-600nm thick is ashed by using a 3:1 mixture of O2 and CO2 and discharging it with a power of about 200W for 15-20min, thus permitting the Cr mask to be prepared at elevated yield without damaging the Cr film by batchwise processing the resist with the barrel user.</p> |
