| 摘要 |
PURPOSE:To enable a nitriding film to form at almost the same temperature as CVD method by a method wherein the primary semiconductor nitriding film is formed by optical decomposition of ammonia gas and thereafter gas containing the semiconduc tor is introduced, then the secondary semiconductor nitriding film is formed by means that thermal or optical decomposition of gas and ammonia gas are performed. CONSTITUTION:High purity NH3 is introduced in a reaction chamber 4 and an Si substrate 10 is heated. Consequently, ultraviolet rays are projected vertically to the substrate 10, then NH and NH2 radical are created by resolution of NH3 molecular and the surface of Si substrate is nitrided, thus an Si3H4 film is obtained as the pri mary semiconductor nitriding film. The semiconductor 10 is kept an necessary tempera ture to CVD method, thereafter gas contained Si is introduced through a conveying tube 11 and deposition of Si3H4 as the secondary semiconductor nitriding film is performed. At this time of forming the secondary semiconductor nitriding film, NH and NH3 radical are created by resolution of NH3 molecular by means of plasma CVD method or ultraviolet of NH3 molecular in stead of thermal CVD method and temperature of the Si substrate 10 may be 200-300 deg.C such as very low by means of the thermal CVD method depositing Si3H4 so as to be prescribed film thickness being reacted with SiH4. |
