| 摘要 |
PURPOSE:To prevent the change in dimension of a thin film transistor, by manufacturing the thin film transistor by a constitution, to which a self-alignment method can be applied. CONSTITUTION:A metal such as Al, Cr, Mo and the like on a glass substrate S. Patterning is performed and a gate electrode 1 is formed. On said substrate, a transparent gate insulating film 2 made of silicon dioxide, silicon nitride and the like is formed. Positive type photoresist is applied on the film 2. Patterning is performed, and a resist pattern is formed. A semiconductor layer, in which impurities are doped in order to obtain ohmic contact between Al and the semiconductor layer, is deposited as a source and drain electrode 4 on the resist pattern. Then, by removing the resist pattern, a part other than the pattern of the source and drain electrode 4 is lifted off. Thus the source and drain electrode, which is not deviated from the pattern of the gate electrode 1, can be positively formed. Finally, a semiconductor layer 3 is deposited. |
