| 摘要 |
PURPOSE:To improve and stabilize the characteristics of a thin film transistor (TFT), by using an inverted taper shaped mask film, performing lift-off, and providing gentle shapes at the end parts of source and drain electrodes. CONSTITUTION:A semiconductor thin film 4 is deposited on an insulating substrate 1. Thereafter, a first mask film 7 and a second mask film 8 are sequentially deposited. As a first conducting film 9, a low-resistance semiconductor thin film 91 and a metal film 92 are used and anisotropic deposition is performed. The thickness of the first conducting film 9 is selected so that it is thinner than the thickness of the first mask film 7. Then, at least one of the first or second mask films 7 or 8 is removed, and the first conducting film 9 is lifted off. Thereafter, a gate insulating film 3 is deposited. Then, wiring holes for a source and a drain are provided in the gate insulating film 3. Thereafter, the second conducting film is deposited and selectively etched. Thus, a gate electrode 2 and source and drain wirings 50 and 60 are provided. |
