| 摘要 |
PURPOSE:To improve reliability of insulation, by forming insulation films at a required intervals on a wafer by bias sputtering, and using them as element isolating layers. CONSTITUTION:A plurality of grooves 34 are formed in an n<-> substrate 32. Then in insulating film 11 is formed by a bias sputtering method. At this time, hollow parts are not formed in the grooves 34. Then, liquid glass 12 is applied on the film 11. Thereafter, a second substrate 4 is stuck to the glass 12. At this time, an isolating oxide film 1 comprising the film 11 and the glass 12 is formed. Then the side of the substrate 32 is scraped so that the film 11 is exposed, and only a regions 33 are made to remain. Therefore, an n<+> regions 2 are made formed. |
