| 摘要 |
PURPOSE:To improve the manufacturing yield rate of a liquid crystal display device, by using a double-layer structure of SiN:N and Al2O3 for inter-wire insulating layers between a gate and a drain and between a source and the drain, and providing a thickness of 200-500Angstrom for the Al2O3 film. CONSTITUTION:A double-layer structure of an SiN:H layer and an oxide insulating layer of a gate wire metal is used for inter-wire insulating films between a gate and a drain and between the gate and a source, in an active matrix type thin film transistor. In manufacturing the substrate on the side of a thin film transistor, an Al gate wire 2 is patterned on an insulating substrate comprising glass and the like, and an Al2O3 insulating film 9 is formed on the surface by anodic oxidation. Then, a picture element electrode 3 is formed by a transparent conducting film. A gate insulating layer 7 made of SiN:H, an amorphous silicon semiconductor layer 4 and an n<+> amorphous silicon layer 8 are deposited by a plasma CVD method. Patterning is performed in a specified shape. Finally a source wire 5 and a drain wire 6 are formed. |
