| 摘要 |
PURPOSE:To non-destructively decide the quality of a thin film based on a current deviation by applying simultaneously the same pulse voltage of an extent that a dielectric breakdown is not generated, to an insulating thin film and a reference capacity having a capacity corresponding to a capacity of said thin film, and comparing transient currents. CONSTITUTION:A sample to be inspected 1 is formed by placing a gate isulating thin film 3 on a p type silicon semiconductor element substrate 2, and a polysilicon film electrode 4 on said film respectively. In this state, to the sample 1, a pulse voltage is applied from a pulse generating means 7 through a probing means 6, and this pulse voltage is applied simultaneously to a reference capacity 5, too. When this pulse voltage is applied, a voltage corresponding to a transient current waveform is generated from resistances 8, 9. Also, based on a voltage from the resistance 8 as a reference, a deviation value of a voltage from the resistance 9 is derived by a voltage deviation detecting means 10, sampled by a gate means 11 by a sampling pulse from the means 7, and compared with a reference voltage corresponding to the sampling time point. In this way, the quality of the thin film of every sampling time point can be decided.
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