发明名称 WRITE CIRCUIT OF MEMORY ELEMENT
摘要 <p>PURPOSE:To improve the write yield, by providing a negative temperature coefficient to a resistor which determines the current restriction value of an open/close circuit. CONSTITUTION:When a memory element Qc1 cannot write by the first write pulse, and many pulses are being applied, the temperature of a resistor R4 increases, and its resistance value decreases, which in turn increases the current restriction value an open/close circuit 4-1. By the increase of a current restric tion value, the write current impressed to the memory element Qc1, and then writing can be executed. In this way, by giving a positive inclination to the current restriction characteristic of the open/close circuit to increase the current restriction value according to the number of pulses being impressed, suitable writing will become possible complying with the manufacturing fluctuation of the memory element, resulting in improvement of write yield.</p>
申请公布号 JPS61133099(A) 申请公布日期 1986.06.20
申请号 JP19840255416 申请日期 1984.12.03
申请人 NEC CORP 发明人 SATO HIROAKI
分类号 G11C17/00;G11C17/06 主分类号 G11C17/00
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