| 摘要 |
PURPOSE:To obtain a tantulum pentoxide film without cracks and irregularities, by growing a silicon nitride film on a substrate, depositing a tantulum film on said film, and performing a thermal oxidation. CONSTITUTION:A silicon nitride film 2 is formed on a silicon substrate 1, and a tantulum film 3 is grown on the nitride film 2. Then the tantulum film 3 is oxidized, and a tantulum pentoxide film 3a is formed. Thus the tantulum pentoxide film 3a without cracks and irregularities can be obtained. |
