| 摘要 |
PURPOSE:To enable to decrease the sensitivity only to a background light without bringing with augmentation of the plane area and to contrive to improve the sensitivity to a signal light by a method wherein the negative sides of two pieces of the photodiodes are connected through a half metal layer and the two photodiodes are used as the semiconductor laminated material. CONSTITUTION:A P type HgCdTe layer 8 having a thickness of 10mum or thereabouts, an N type HgCdTe layer 9 having a thickness of 3-5mum or thereabouts, an N type HgCdTe layer 10 having a thickness of 10-20mum or thereabouts, an N type HgCdTe layer 11 having a thickness of 3-5mum or thereabouts and a P type HgCdTe layer 12 having a thickness of 10mum or thereabouts are formed in order on a P type CdTe substrate 7 having a thickness of 300mum or thereabouts using a liquid-phase growth method and frame-shaped electrodes 13 and 14, both having a thickness of 1mum or thereabouts, are respectively formed on the upper and lower faces of the laminated material. The photodetector to be manufactured in such a way is housed in a light-shielding package 6 having an irradiating window 61 for a signal light A including a background light and an irradiating window 62 for a light (dummy background light) B equivalent to a background light and when the signal light A and the dummy background light B are irradiated, the output of current to correspond to the signal light only, from which current to correspond to the dummy background light B is deducted, can be obtained between output terminals 3 and 4. |
