| 摘要 |
PURPOSE:To dispose electrodes in a high density by disposing gate electrodes opposed to source/drain electrodes through a semiconductor layer, and disposing to surround one of source and drain electrodes with the other, thereby reducing the length of an element. CONSTITUTION:A gate electrode 12 is disposed to oppose to a source electrode 15 and a drain electrode 16 through a semiconductor layer 14, and an arcuately formed source electrode 15 is disposed to surround the drain electrode 16 formed in an arcuated shape smaller in radius than that of the electrode 15 on the same flat surface. Since such a construction is formed, a thin film transistor having 10mum channel length and 5mm channel width capable of obtaining 100muA of source and drain current is contained in a diameter of approx. 1.9mm, and can be reduced in length to approx. 1/3 of the thin film transistor necessary for the length of approx. 5.1mm in the direction of channel width in the channel length to heretofore obtain the same source and drain current. |
