| 摘要 |
<p>PURPOSE:To produce a highly integrated and quickly operating programmable semiconductor integrated storage circuit form miniaturized memory cells with small parasitic capacitance by using diodes to be opened by prescribed current or voltage or more as storage elements. CONSTITUTION:A PROM or the like is formed by a diode array 42 in which storage elements 41, 41,... using p-n junction diodes consisting of polycrystal silicic acid which are opened by prescribed forward or backward current or voltage or more are connected like a matrix. When a required element 41 is opened by forward bias voltage or the like through X and Y drivers 44, 46, writing is started. By using the miniaturized diodes with small parasitic capacitance as memory cells, the programmable semiconductor integrated storage circuit can be highly integrated and quickly operated.</p> |
