| 摘要 |
PURPOSE:To enable to accomplish an excellent vapor-phase growing process without adhesion of moisture and oxygen and the like by a method wherein a ring is moved between a reaction chamber and the leading chamber using a conveying fork in such a manner that the ring on which a wafer is placed is fitted to the protruded part located in the center part on the upper surface of a susceptor. CONSTITUTION:A conveying fork 25 is moved forward to the side of a reaction chamber 1 by opening a partition valve 3, and after the ring 22 on which a processed wafer is placed is retained, the conveying fork 25 is moved back into the leading chamber 2. Then, the sluice valve 3 is closed,a wafer carry-in hole is opened, the processed wafer on the ring 22 is moved up to outside, picked up on a transfering plate 27, and at the same time, the non-processed wafer is placed thereon, it is moved down and placed on the ring 22. Then after the wafer carry-in hole is closed and the leading chamber 2 is vacuum- exhausted, dry nitrogen is introduced, and the sluice valve 3 is opened, the conveying fork 25 is moved forward to the reaction chamber side. After the ring 22 is fitted to the protruded part 21 of a susceptor 20, the ring is moved back to the leading chamber 2, and the sluice valve 3 is closed. |
