| 摘要 |
PURPOSE:To contrive accomplishment the state of low resistance at a crossing part by a method wherein two partial wiring layers of the same material as two conductive layers are arranged facing each other, and these partial wiring layers are used as the crossing part with the first wiring on the second wiring. CONSTITUTION:After an insulating layer is formed on the whole surface of a main surface of a substrate 1, and a conductive layer consisting of polysilicon, the first conductive layer 3 and a partial wiring layer 12 are formed by performing an etching, and an insulating layer 2 is formed by performing an etching using the above-mentioned layers as a mask. Then, after a diffusion layer 4 is formed by performing a self- alignment method, the second insulating layer 5 is formed on the whole surface of the main surface of the semiconductor substrate 1. After a conductive layer is formed on the whole surface of the layer 5 and the second partial wiring layer 13 and a conductive layer 6 by performing an etching, the third insulating layer 8 is formed on the whole surface of the main surface, and a contact hole 9 reaching the first and the second partial wiring layers 12 and 13 is formed. Subsequently, an aluminum conductive layer is formed on the whole surface of the third insulating layer 8 in such a manner that said hole 9 is filled up, the first wiring layer 10, the third partial wiring layer 15, and the fourth partial wiring layer 16 are formed simultaneously by performing an etching, and all processes are finished. |
