| 摘要 |
PURPOSE:To obtain a highly precise semiconductor in a highly efficient manner by a method wherein a reaction chamber is formed in a column shape having an almost isosceles triangled cross section, a linear lamp group is arranged outside the isosceles of the isosceles triangle as the source of light, a reaction gas feeding hole is positioned at both base angles of the isosceles triangle of the reaction chamber, and an exhaust hole is positioned at the top point. CONSTITUTION:Reaction gas 4 is introduced from the feeding holes 17a and 17b located on both ends of the lower part of a reaction chamber 11, and the gas is excitation-decomposed by the light projected from light-projecting windows 16a and 16b. The gas 4a after reaction is exhausted from the exhaust hole 18 provided in the vicinity of the top point of the reaction chamber 11. At this time, the reaction chamber 11 is formed into the column shape of isosceles triangle, and as the linear lamp groups of 12a and 12b are arranged along the isosceles of the linear lamps as the source of light, the distance between the source of light and a substrate 5 is reduced when compared with the device of conventional structure, and as a result, the illuminance of light is increased, thereby enabling to remarkably increase the speed of formation of a thin film when compared with the conventional device. |
