| 摘要 |
PURPOSE:To improve the reliability, retaining characteristic and yield of a nonvolatile memory by using an HTO film as an interlayer insulating film between a floating gate electrode and a control gate electrode. CONSTITUTION:A source region 2 and a drain electrode 3 are formed near the surface of a semiconductor substrate 1, a gate insulating film 4 is formed on the surface of the substrate 1 interposed between the two regions, a floating gate electrode 5 is formed thereon, an HTO film 6 is formed thereon, and a control gate electrode 7 is further formed thereon. The film 6 is a capacitively coupling insulating film when controlling the potential of the electrode 5 by the electrode 7, and formed by a CVD method at high temperature (700 deg.C or higher). |
