发明名称 MOS TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the reliability and to decrease the power consumption by applying a power supply voltage of an MOS semiconductor integrated circuit via a constant voltage drop circuit in which the voltage drop shows a nonlinear characteristic with respect to current. CONSTITUTION:In applying a voltage to an MOS main circuit 11 from an external power supply Vcc, an internal voltage Vs is applied via an element having a nonlinear voltage-current characteristic such as diodes D1 and D2, and the substrate voltage is connected to an earth side Vss of an external power supply. Even when a main current ID changes largely at main circuit operation A and at non-operation B, the voltage drop is very small as a change from Vs2 to Vs1, the circuit 11 is driven stably with a large current, the reliability is improved, the current a standby is small and the power consumption is reduced.
申请公布号 JPS61131617(A) 申请公布日期 1986.06.19
申请号 JP19840253004 申请日期 1984.11.30
申请人 TOSHIBA CORP 发明人 IIZUKA TETSUYA
分类号 H03K19/00;G11C5/14;G11C11/407;G11C11/408;H01L21/8234;H01L27/06;H01L27/10 主分类号 H03K19/00
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