| 摘要 |
PURPOSE:To prevent an erroneous writing due to an external noise of a static electricity, etc., by connecting prescribedly a voltage limit element, an electric current limit element, etc. CONSTITUTION:To non-volatile memories 201, 202... between a terminal for electric power source voltage VDD or VSS and a terminal for high electric power source VDD of negative for writing, an electron is poured through a voltage VPP,and the writing is executed. Between these terminals, voltage control elements 203 and 204 are connected and electric current limit elements 206, 205, etc., of a transistor, a coil, etc., are connected between the terminal and the memories 201, 202... to which the voltage VPP is supplied, the electron to the memories 201, 202... due to the external noise of a static electricity, etc., is not poured, and the erroneous writing due to the external noise can be prevented. |
