| 摘要 |
PURPOSE:To form a film in one step to reduce the number of stages and to prevent stripping between layers due to insufficient adhesion by forming the film of a lower magnetic pole on a substrate, and then forming films of a gap layer and a lower insulating layer successively on the lower magnetic pole in the same vacuum. CONSTITUTION:A metallic magnetic film is formed on a substrate 1 by sputtering, vapor deposition, plating, etc. to form a lower magnetic pole 2, and then various kinds of insulating films of Al2O3 and SiO2 are successively formed on the lower magnetic pole 2 in the same vacuum in a sputtering device having plural targets to form a gap layer 3 and a lower insulating layer 4. Subsequently, etching is carried out with a liq. mixture of fluoric acid and hydrogen fluoride to dissolve the SiO2 in the lower insulating layer 4 to make a hole at each part of the front gap part 5 and a back gap part 6, and each gap part 5 and 6 is exposed. A coil 7 is then formed on the lower insulating layer 4 by photolithography, an upper insulating layer 8 is formed thereon, and an upper magnetic pole 9 is formed on the layer 8. |
