| 摘要 |
PURPOSE:To prevent the generation of contact failure by forming ohmic contacts of good wiring layers also to an impurity region of large junction capacitance by a method wherein the position of contact between the wiring layer and the impurity layer is put in the neighborhood of a thermal oxide film. CONSTITUTION:Thermal oxide films 2 are selectively formed on the surface of an N type epitaxial Si layer 1 of the titled device, and a P type impurity region 3 and an N<+> type impurity region 4 are formed in the surface of the Si layer 1 by impurity diffusion with the mask of this oxide film 2. A CVD-SiO2 film 5 used as the diffusion source is formed on this oxide film 2 is order to form respective regions 3, 4, and the contact hole of this film 5 is provided so as to reach the neighborhood of the edge of the oxide film 2. Then, an aluminum wiring layer 6 is made as an insufficient Al/Si alloy layer 8' at the center of the impurity region 3 and as a sufficient Al/Si alloy layer 8 in the neighborhood of the oxide film 2, resulting in the formation of good ohmic contacts. |
