发明名称 |
Inspection system utilizing dark-field illumination |
摘要 |
Integrated-circuit wafers and the lithographic masks and reticles used in their fabrication must be inspected for defects. Conventional systems accomplish such inspection by bright-field illumination and comparison of corresponding portions of two supposedly identical patterns on the workpiece. The minimum-size defect that can be so detected is set by misalignment between the patterns. Dark-field illumination of the portions to be compared significantly enhances the detection capabilities of such an inspection system. For a given misalignment, dark-field illumination permits the detection of defects at least four times smaller than those detectable in a conventional bright-field-illuminated system.
|
申请公布号 |
US4595289(A) |
申请公布日期 |
1986.06.17 |
申请号 |
US19840573816 |
申请日期 |
1984.01.25 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
FELDMAN, MARTIN;WILSON, LYNN O. |
分类号 |
G01B11/24;G01B11/245;G01N21/88;G01N21/956;G03F1/00;G03F7/20;H01L21/30;H01L21/66;(IPC1-7):G01B11/00 |
主分类号 |
G01B11/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|