发明名称 Photoconductive member having a-Ge and a-Si layers with nonuniformly distributed oxygen
摘要 A photoconductive member is provided which comprises a substrate for a photoconductive member and a light receiving layer provided on said substrate having a layer constitution comprising (1) a first layer in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, and (2) a second layer which is constituted of an amorphous material comprising silicon atoms and at least one of carbon atoms and nitrogen atoms, said first layer containing oxygen atoms and having a first layer region, a third layer region and a second layer region, with oxygen atom distribution concentration in the layer thickness direction of C(1), C(3), and C(2), respectively, in the order mentioned from the substrate side with a proviso that C(3) does not solely take the maximum value and when either one of C(1) and C(2) is zero, the other two are not zero and not equal to each other, or when C(3) is zero, the other two are not zero, or when none of C( 1), C(2), and C(3) is zero, the three of C(1), C(2), and C(3) cannot be equal simultaneously and C(3) cannot solely take the maximum value.
申请公布号 US4595645(A) 申请公布日期 1986.06.17
申请号 US19840666229 申请日期 1984.10.29
申请人 CANON KABUSHIKI KAISHA 发明人 SAITOH, KEISHI;OHNUKI, YUKIHIKO;OHNO, SHIGERU
分类号 G03G5/082;(IPC1-7):G03G5/082 主分类号 G03G5/082
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