| 摘要 |
PURPOSE:To facilitate the formation of the title device utilizing the electron gas of an ultrashort gate by a method wherein a high impurity concentration layer, undoped layer, and high impurity concentration layer of compound semiconductor are epitaxially formed, and an electron supply layer is formed on the wall surface of a groove formed in the layers. CONSTITUTION:A high impurity n<+> GaAs layer 12, an i-GaAs layer 13, and a high impurity n<+> GaAs layer 14 are successively epitaxially grown on an n<+> GaAs substrate 11. An SiO2 film 15 is provided and patterned, and a V- groove 16 is formed by etching. An Al.xGa1-xAs carrier supply layer 17 is epitaxially grown, and the Al of a gate 18 is deposited thereon. The film 15 is further patterned, and source electrodes 19 are deposited; then, a drain electrode 20 is deposited on the substrate 11 side. An element utilizing the secondary electron gas of submicron gate length can be easily obtained by forming the carrier supply layer 17 in such a manner that a secondary electron gas layer 21 is formed in the surface of the V-groove 16. |
