| 摘要 |
PURPOSE:To easily form an image in an invisible wavelength region by converting the wavelengths of invisible light into those of the visible light, and forming an electrostatic image on a photoconductive body having high sensitivity to the visible light. CONSTITUTION:Laser beams 12 of 820nm wavelength is emitted from a semiconductor laser device 11 of GaAlAs, or the like, and modulated with image information in a device not illustrated, and allowed to irradiate a secondary high-frequency wave generator 13 composed of KNbO3. It converts the laser beams 12 into 410nm laser beams 14 having image information, the beams 14 are reflected with a polygonal mirror 15, and allowed to form an image through an ftheta lens on a photosensitive drum 18 composed essentially of an amorphous silicon hydride and electrostatically charged with a corotron 17 in advance to form an electrostatic latent image. It is developed 19, and transferred and fixed with devices not illustrated, thus permitting image information to be easily visualized, and this device to be adapted to detection of the images of X-rays UV rays, and IR rays. |
