| 摘要 |
A semiconductor memory which comprises a memory section including a plurality of memory cell groups, each group including a plurality of memory cells; each of said memory cell groups including a circuitry arrangement in which the memory cells in each column are connected by a bit line, and in which the memory cells in each row are connected by a first word line; each of said first word lines having a second word line mating therewith, said second word line being made of aluminum; each of said memory cell groups including a column decoder for selecting one from said bit lines and a row decoder for selecting one from said second word lines each in accordance with an input address signal; and a group selecting unit including a group selecting decoder and a group selecting circuit, whereby said first and second word lines are connected or disconnected so as to enable the memory operation to be conducted group by group.
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