| 摘要 |
<p>PURPOSE:To prevent the increase in current density of a cathode post by providing an electrode lead-out member which sandwiches a semiconductor element in pressure contact with electrode layers on both main surfaces of a semiconductor substrate, so that the periphery of the cathode post in pressure contact with the electrode layers may surround the electrode layers. CONSTITUTION:The semiconductor element having electrode layers on both main surfaces of a semiconductor substrate of the large-power thyristor and the electrode lead-out member which can sandwich this semiconductor element in pressure contact with both electrode layers of this semiconductor element are provided. The electrode lead-out member 11 in pressure contact with the cathode 103 of the semiconductor substrate 102 of this large-power thyristor is composed of the cathode post 11c and a metallic thin plate 11m attached so as to coat its adhesion surface. The area is made larger than that of the cathode 103c so that the periphery of the pressure contact surface may surround the cathode post 11c; thus, the increase in current density in the periphery of the cathode post 11c is prevented, and uniform current is flowed into the cathode post 11c.</p> |
