| 摘要 |
PURPOSE:To contrive to increase the integration by reducing margins to positional shifts, by a method wherein contact holes to make electrical contacts between the drain or source of a FET and wirings are bored through the polycrystalline Si forming the upper MOSFET. CONSTITUTION:The polycrystalline Si of the upper MOSFET if opened through in order that the source or drain of a FET on the Si substrate and the source or drain of a FET formed thereon make electrical contacts with a wiring 601 which is a constituent of the title device. The electrical contact of this polycrystalline Si with the wiring is made on the side surface of the aperture of the polycrystalline Si. This manner enables the semiconductors of high integration degree to be obtained with the need of little margin to positional shift. |
