| 摘要 |
PURPOSE:To perform photoelectric conversion action of high accuracy by a method wherein the element-isolating region is composed of a capacitor electrode and an oxide film coating the capacitor electrode, and the capacitor is formed out of this electrode and the oxide film. CONSTITUTION:An n<-> epitaxial layer 102 is formed on an n type Si substrate 101, and photosensors electrically insulated from each other by the element- isolating region are formed therein. This element-isolating region is composed of capacitor electrodes 103 and oxide films 104 coating the electrodes 103. Each photosensor has a p-base region 105 and an n<+> emitter region 106 of a bi-polar transistor on the layer 102. This region 105 is opposed to the electrode 103 across the oxide film 104 of the element-isolating region and forms the capacitor used to control the potential of the region 105. |
