| 摘要 |
PURPOSE:To economically obtain the title element of low noise and high quality by a method wherein the photo receiving part of reverse conductivity type at high concentration, an inclined region of reverse conductivity type, and a guard ring part are previously formed on an InP layer on the substrate; thereafter, a one-conduction type InP layer of low concentration is formed in the region except the photo receiving part by Be ion implantation. CONSTITUTION:An N-InP layer 12 as the buffer layer, N-InGaAs layer 13, N-InGaAsP layer 14, and N-Inp layer 15 are laminated on a (111) A InP substrate 11 by liquid phase growth. A P<+> Inp layer 16 is formed by CD diffusion to the layer 15, and an inclined junction 17 is formed by Be implantation to the guard ring region of the layer 15. Be is implanted to the periphery 17 of the layer 15, and a guard ring 18 of low concentration N-InP layer is formed by heat treatment. This manner yields excellent guard ring effect. |
