发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PURPOSE:To improve uniformity of film thickness with a reaction gas concentration uniformed on a substrate, by providing with a supplying side pressure- equalizing chamber and exhausting side pressure-equalizing chamber in the reaction chamber. CONSTITUTION:Curtain gas 8 is supplied into a curtain gas supplying chamber 15 and is introduced into the reaction chamber through curtain gas supplying ports 15c. Reaction gas 7 is supplied into a reaction gas supplying chamber 14 and is introduced into the reaction chamber through a supplying port 14d of the supplying chamber 14. Exhaustion gas 9 consisting of the reacted gas and curtain gas is flowed into an exhaustion chamber 13 from an exhaustion port 13c, and is exhausted from the exhaustion chamber 13 outside the quartz glass tube 21. In this structure, since the blowing-out resistances of the gas 7, 8 at the respective supplying ports 14d, 15c in the supplying chambers 14, 15 are large, the pressure in the axial direction of the tube 21 becomes uniform. Owing to the taking-in resistance at the exhaustion port 13c, the gas pressure in the reaction chamber becomes uniform in the direction perpendicular to the gas flow so that concentration of the gas 7 over the substrate 4 can also become uniform.
申请公布号 JPS61129818(A) 申请公布日期 1986.06.17
申请号 JP19840251073 申请日期 1984.11.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBAYASHI TOSHIYUKI;OTOMO YOSHIMI;KINOSHITA NORIYOSHI;ODA MASAO
分类号 H01L21/205;H01L21/263;H01L21/31 主分类号 H01L21/205
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