| 摘要 |
PURPOSE:To make thickness of films formed on wafers uniform, by providing with reaction gas spouting openings through a wafer-positioning stand having a basket thereon, with each opening located between the respective wafers, so that the reaction gas can pass along the respective wafers. CONSTITUTION:Reaction gas is supplied from a supplying port 13 through a manifold 12 into a pressure-reduced CVD vessel 11, that is a reaction gas passage 15 in a wafer-positioning stand 14, and then from the passage 15 the gas is spouted along the face of each wafer 6 through each reaction gas spouting opening 16 defined between the respective wafers 6. The wafers 6 which are arrayed in parallel, are slanted in a wafer basket which is placed on the wafer- positioning stand 14. The reaction gas which is introduced into the stand 14 in the vessel 11, is spouted uniformly from the spouting openings 16 in the stand 14 through the gaps between the respective wafers 6 as shown by the arrow in the figure. Accordingly, since all the gaps between the wafers have the same configuration, flow rate of the reaction gas passing through each gap becomes approximately uniforms so that thickness of films formed on wafers 6 can be uniformed. |
