| 摘要 |
PURPOSE:To perfect the insulation of semiconductor elements by forming a sufficient isolation width and a sufficient depth by a method wherein projections of the position to form element-isolating regions are covered with an insulation film, and a semiconductor layer is epitaxially grown in the recess between the projections. CONSTITUTION:On an Si substrate 101 at the position to form element-isolating regions, projections 105 are formed by removing and oxide film, a nitride film, etc., using the mask of a photo resist. The element-isolating regions are constructed on the substrate 101 by forming and Si oxide film 106 so as to cover each of these projections 105. Further, an epitaxial layer 108 is epitaxially grown in the recess between the projections 105. Then, interelement insulation of the titled device is perfected by forming element-isolating regions of micro width and depth and sufficient depth. |
