发明名称 PLASMA ETCHING DEVICE
摘要 PURPOSE:To obtain a plasma etching device which can prevent the occurrence of undercut and corrosion in an object to be treated, by providing an electrode which fixes an object to be treated in a vacuum vessel and another electrode facing to the first mentioned electrode and equipped with gas blowing ports and constituting the gas blowing ports under an openable-closeable condition. CONSTITUTION:In a plasma etching device which is provided with an electrode (not shown in the figure) for fixing an object to be treated and a gas blowing electrode 9 united with an upper electrode 7 facing the first mentioned electrode and equipped with gas blowing ports 8 and has such a constitution that the etching gas supplied from a gas supplying tube 10 is blown into the space between both electrodes from the gas blowing ports 8, a shielding plate 22 which is contacted with the inner bottom surface of the gas blowing electrode 9 is provided and gas blowing ports 23 corresponding to the gas blowing ports 8 are installed to the shielding plate 22. In addition, the shielding plate 22 is constituted in such a way that the plate 22 can be rotated, by means of a driving device 25 through a shaft 24. While etching is made with this plasma etching device, the gas blowing ports 8 and 23 are made coincident with each other and, when the etching is completed, the shielding plate 22 is immediately rotated and the blowing of gas is stopped, so as to prevent the occurrence of undercut, etc., in the object to be treated.
申请公布号 JPS61127876(A) 申请公布日期 1986.06.16
申请号 JP19840250116 申请日期 1984.11.27
申请人 TOKUDA SEISAKUSHO LTD;TOSHIBA CORP 发明人 KURISAKI TETSUO;SHIBAGAKI MASAHIRO
分类号 H01L21/302;C23F1/08;C23F4/00;H01L21/3065 主分类号 H01L21/302
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