| 摘要 |
PURPOSE:To prevent the generation of a latch-up by forming a deep diffusion layer without occupying a large area. CONSTITUTION:Structure in which a groove is formed to a semiconductor substrate and the edge of the groove is used as a siffusion layer is shaped. The same effect as deep diffusion can be displayed by normal diffusion by utilizing the groove. A deep diffusion layer and a shallow diffusion layer can be shaped simultaneously only by changing a patterning for a diffusion mask, and even parasitic currents in a deep section generated in the semiconductor substrate is absorbed rapidly when the deep diffusion layer formed in this manner is used as a guard region, thus displaying a large effect for preventing a latch-up phenomenon while increasing the element isolation effect of the groove. A large area is not required for shaping the deep diffusion layer, thus augmenting the density of integration, then reducing chhip size. |
