| 摘要 |
PURPOSE:To accurately measure the amount of time the defects came to occur, by performing a testing through putting the semiconductor element in a testing chamber, with the element being connected to a recorder that records the progress of the current supplied to the semiconductor element together. CONSTITUTION:At first, plural semiconductor element 1 are mounted on an aging substrate 2, then, the substrate 2 is connected to a direct current power source 3 through a resistor 6 with a lead wire 4, and is put in a testing bath 5 that is a high-temperature thermostatic chamber while the specified voltage is applied to the semiconductor elements 1 together. After that, when the testing equipment including the semiconductor elements 1 is stabilized, the voltage drop at the resistor 6 is recorded after the both ends of the resistor 6 have been connected to the recorder 7. By doing this, it is made possible to measure the amount of time the defects came to occur. |
