| 摘要 |
PURPOSE:To form a deep via-hole with excellent uniformity, and to improve high-frequency characteristics largely by shaping an insulating film to the lower section of a source electrode section and using the same insulating film on the surface of the reverse side of a substrate as an etching mask. CONSTITUTION:An silicon dioxide film 2 for a stopper is formed onto the sur face of a substrate 101, and a source electrode 104s, a drain electrode 104d and a gate electrode 104g are shaped. A sliding board 105 is removed from a thinned substrate 1, an silicon dioxide film 2 is approximately 500Angstrom is formed onto a main surface, the back, and a resist mask 4 for shaping a via hole and the silicon dioxide film 3 are patterned. The via hole 5 for the substrate reaching the silicon dioxide film 2 for the stopper is formed, the resist mask 4, the silicon dioxide film 3 and the exposed silicon dioxide film 2 for the stop per are removed, gold is evaporated on the whole surface of the surface in approximately 1mum thickness, and gold is laminated and applied in approximate ly 10mum thickness through plating to shape a via-hole gold layer 6. |
