| 摘要 |
PURPOSE:To execute excellent anisotropic etching of Al with high throughput by specifying the ratio of the space between flat plate electrodes with respect to the diameter of a high-frequency electrode at a specific value or below and subjecting the Al to dry etching under adequate conditions. CONSTITUTION:An etching gas contg. <=40% CCl4 and BCl3 and having >=10Pa pressure is used and the electric power density of the high-frequency electric power area of the flat plate electrodes is set at >=0.2W/cm<2> in a method for the dry etching of the above-mentioned Al by disposing a pair of the flat plate electrodes facing each other in a reaction vessel, imposing a substrate provided with a surface Al film on one of the electrodes, grounding the same, impressing the high-frequency electric power to the other electrode and introducing the prescribed etching gas into the above-mentioned vessel. The space between the above-mentioned two electrodes is set at <=1/5 the diameter or short diameter of the flat plate electrode to which the high-frequency electric power is impressed. The etching of the Al at the low side etching rate is executed with the high throughput by the above-mentioned anode couple method.
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