| 摘要 |
PURPOSE:To form a uniform thin film having an excellent quality on a substrate at a high speed, by generating plasma with high-frequency electric power between a substrate electrode and a target electrode after applying a magnetic field to the space between both the electrodes by introducing microwaves to the space. CONSTITUTION:Microwaves are introduced to the space between the target electrode 10, on which a target material 1 is placed, and the substrate electrode 11 holding a wafer 2 in a vacuum chamber 13 which is maintained at the prescribed degree of vacuum by introducing inert gas from a microwave power source 3 through the introducing path 4 a waveguide 12 and the introducing window 9 and, at the same time, after applying a magnetic field which excites electronic cyclotron resonance to electrons, high-frequency electric power is supplied across both the electrodes 10 and 11 from an RF power source 6 for sputtering through a matching circuit 5 and plasma is generated. Therefore, the target material 1 is sputtered by producing the uniform plasma having a high-ion density in the above-mentioned space 8 and a thin film which is uniform and contains no impurities is formed on a wafer 2 at a high speed.
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