| 摘要 |
PURPOSE:To realize a semiconductor device having high-speed switching characteristics by forming a Schottky junction only on the end surface of a mesa. CONSTITUTION:An electrode 4 forming a Schottky junction is shaped to a mesa 2 so as to be brought into contact only with an end surfact at one end. The Schottky junction is formed along the direction of thickness of the mesa 2. Accordingly, the thickness of the mesa 2 generally extends over 300-500nm, thus making a junction capacitance to one tenth or lower as compared to the conventional constitution, then obtaining a semiconductor device having high- speed switching characteristics. |
